Title :
Dependence of transverse spreading velocity of a high-field domain in a GaAs bulk element on the bias electric field
Author :
Tomizawa, K. ; Kataoka, S.
Author_Institution :
Ministry of International Trade & Industry, Electrotechnical Laboratory, Tokyo, Japan
Abstract :
The transverse spreading velocity of a high-field domain, triggered by a pair of capacitive electrodes at the middle of a planar-type GaAs bulk element, was measured as a function of the bias electric field. The results show that the velocity increases from about 108 to 109 cm/s with an increase of the bias electric field from 2.8 to 3.15 kV/cm.
Keywords :
Gunn devices; Gunn effect; III-V semiconductors; domains; electric field effects; gallium arsenide; semiconductor materials; bulk elements; capacitive electrodes; electric field; high field domain; transverse spreading velocity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720093
