Title :
Multiple-valued decoder using MOS-HBT-NDR circuit
Author :
Gan, K.J. ; Liang, D.-S. ; Tsai, C.-S. ; Chen, Y.H. ; Wen, C.-M.
Author_Institution :
Kun Shan Univ., Tainan
Abstract :
The design of a four-valued decoder based on the negative-differential- resistance (NDR) circuit is demonstrated. The presented NDR circuit is composed of a Si-based metal-oxide-semiconductor field-effect- transistor (MOS) and a SiGe-based heterojunction bipolar transistor (HBT). The fabrication of the four-valued decoder using this MOS- HBT-NDR circuit is based on the standard 0.35 mum SiGe-based BiCMOS process.
Keywords :
MOSFET; decoding; heterojunction bipolar transistors; negative resistance circuits; BiCMOS process; MOS-HBT-NDR circuit; SiGe; four-valued decoder; heterojunction bipolar transistor; metal-oxide-semiconductor field-effect-transistor; negative-differential-resistance circuit; size 0.35 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071129
