• DocumentCode
    916929
  • Title

    Multiple-valued decoder using MOS-HBT-NDR circuit

  • Author

    Gan, K.J. ; Liang, D.-S. ; Tsai, C.-S. ; Chen, Y.H. ; Wen, C.-M.

  • Author_Institution
    Kun Shan Univ., Tainan
  • Volume
    43
  • Issue
    20
  • fYear
    2007
  • Firstpage
    1092
  • Lastpage
    1093
  • Abstract
    The design of a four-valued decoder based on the negative-differential- resistance (NDR) circuit is demonstrated. The presented NDR circuit is composed of a Si-based metal-oxide-semiconductor field-effect- transistor (MOS) and a SiGe-based heterojunction bipolar transistor (HBT). The fabrication of the four-valued decoder using this MOS- HBT-NDR circuit is based on the standard 0.35 mum SiGe-based BiCMOS process.
  • Keywords
    MOSFET; decoding; heterojunction bipolar transistors; negative resistance circuits; BiCMOS process; MOS-HBT-NDR circuit; SiGe; four-valued decoder; heterojunction bipolar transistor; metal-oxide-semiconductor field-effect-transistor; negative-differential-resistance circuit; size 0.35 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071129
  • Filename
    4338202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=916929