0.18 μm CMOS dual-band UWB LNA with interference rejection

A CMOS dual-band ultra-wideband low noise amplifier (LNA) with interference rejection is presented. The proposed LNA employs a current reuse structure to reduce power consumption and an active notch filter to produce in-band rejection in the 5 GHz WLAN frequency band. The load tank of the current reuse stage is optimised to provide an additional out-band attenuation in the 2.4 GHz WLAN band. Measurement shows a peak gain of 19.7 dB in the low band (3-5 GHz) and 20.3 dB in the high band (6-10 GHz), while the in-band and out-band maximum rejections are 19.6 and 12.8 dB, respectively.