Title :
High-quality MOSFETs with ultrathin LPCVD gate SiO/sub 2/
Author :
Ahn, J. ; Ting, W. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
MOSFETs and MOS capacitors with ultrathin (65 AA) low-pressure chemical vapor deposition (LPCVD) gate SiO/sub 2/ have been fabricated and compared to those with thermal SiO/sub 2/ of identical thickness. Results show that the devices with LPCVD SiO/sub 2/ have higher transconductance and current drivability, better channel hot-carrier immunity, lower defect density, and better time-dependent dielectric breakdown (TDDB) characteristics than devices with conventional thermal SiO/sub 2/.<>
Keywords :
CVD coatings; dielectric thin films; electric breakdown of solids; hot carriers; insulated gate field effect transistors; metal-insulator-semiconductor devices; silicon compounds; 65 AA; MOS capacitors; MOSFETs; Si-SiO/sub 2/; TDDB characteristics; channel hot-carrier immunity; current drivability; defect density; low-pressure chemical vapor deposition; time-dependent dielectric breakdown; transconductance; ultrathin LPCVD gate oxide; Annealing; Dielectric substrates; Electric breakdown; Hot carriers; MOS capacitors; MOSFETs; Silicon; Thermal stresses; Thickness control; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
