Title :
An Intrinsically Switchable FBAR Filter Based on Barium Titanate Thin Films
Author :
Zhu, Xinen ; Lee, Victor ; Phillips, Jamie ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
fDate :
6/1/2009 12:00:00 AM
Abstract :
A switchable thin film bulk acoustic wave resonator (FBAR) filter based on barium titanate (BTO) thin films is reported for the first time. BTO is a ferroelectric material which possesses electrostriction, giving the filter the ability to be placed in either an on state or an off state by changing the applied dc bias voltage. A 1.5 stage ladder type bandpass filter using BTO FBARs has been designed, fabricated, and measured. The application of a 15 V dc bias results in the filter being place in an on state with a center frequency of 2.14 GHz, a 40 MHz bandwidth and 6.2 dB of insertion loss. Conversely, the application of a - 3 V dc bias results in the filter being placed in an off state with 15 dB of rejection. This filter is very compact with dimensions of 40 mum by 80 mum.
Keywords :
acoustic resonator filters; band-pass filters; barium compounds; ferroelectric devices; ferroelectric thin films; BaTiO3; applied dc bias voltage; bandpass filter; barium titanate thin films; dc bias; electrostriction; ferroelectric material; insertion loss; loss 6.2 dB; off state; switchable thin film bulk acoustic wave resonator filter; voltage -3 V; voltage 15 V; Barium titanate (BTO); bulk acoustic wave devices; ferroelectric thin films; film bulk acoustic wave resonator (FBAR); switchable filters;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2020013