Title :
New time-of-flight technique for measuring drift velocity in semiconductors
Author :
Evans, A.G.R. ; Robson, P.N. ; Stubbs, M.G.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
A microwave time-of-flight method for measuring the v/E characteristic of semiconductors is described. Results taken on a sample of gallium arsenide, using this technique, are shown to be in good agreement with those obtained from the same sample by the more conventional time-of-flight method.
Keywords :
characteristics measurement; electron mobility; microwave measurement; semiconductor materials testing; Schottky barrier contact; drift velocity; electron mobility; gallium arsenide; high resistivity; microwave measurements; p-n junction; semiconductor materials testing; time of flight techniques; v/E characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720142
