• DocumentCode
    917304
  • Title

    Pulse generation in planar Gunn devices with varying nL product

  • Author

    Heime, K. ; Schlachetzki, A.

  • Author_Institution
    Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
  • Volume
    8
  • Issue
    8
  • fYear
    1972
  • Firstpage
    203
  • Lastpage
    205
  • Abstract
    Measurements of the current reduction in planar Gunn devices by domain nucleation are reported. The devices were made of epitaxially grown GaAs layers. The measurements showed a decrease of the current reduction, relative to the threshold current Ith, with decreasing nL product, beginning at about nL = 1013 cm¿2, where n is the electron concentration and L is the length of active channel.
  • Keywords
    Gunn devices; pulse generators; semiconductor materials; GaAs; Gunn devices; domain nucleation; high speed digital techniques; pulse amplification; pulse generators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720148
  • Filename
    4235598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917304