• DocumentCode
    917315
  • Title

    Waveguide photodetectors for the near-infrared in polycrystalline Germanium on silicon

  • Author

    Colace, Lorenzo ; Altieri, G.M.A. ; Assanto, Gaetano

  • Author_Institution
    Dept. of Electron. Eng., Univ. "Roma Tre", Italy
  • Volume
    18
  • Issue
    9
  • fYear
    2006
  • fDate
    5/1/2006 12:00:00 AM
  • Firstpage
    1094
  • Lastpage
    1096
  • Abstract
    We demonstrate novel near-infrared waveguide photodetectors in polycrystalline germanium deposited on silicon-on-insulator at low temperatures. We present the design, fabrication, and characterization of two photodiodes and their comparison. Without optimization, at 1.55 μm, we measured wall-plug and effective responsivities as high as 30 mA/W and in excess of 150 mA/W, respectively.
  • Keywords
    elemental semiconductors; germanium; infrared detectors; integrated optoelectronics; optical design techniques; optical fabrication; optical waveguides; photodetectors; photodiodes; silicon-on-insulator; 1.55 mum; Ge-Si; near-infrared waveguide photodetectors; photodiodes; polycrystalline germanium; silicon-on-insulator; Absorption; Bandwidth; Detectors; Fabrication; Germanium; Optical waveguides; PIN photodiodes; Photodetectors; Silicon; Temperature; Germanium (Ge); integrated optoelectronics; near-infrared (NIR); photodetectors; silicon (Si) optoelectronics;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2006.873964
  • Filename
    1624498