Title :
Waveguide photodetectors for the near-infrared in polycrystalline Germanium on silicon
Author :
Colace, Lorenzo ; Altieri, G.M.A. ; Assanto, Gaetano
Author_Institution :
Dept. of Electron. Eng., Univ. "Roma Tre", Italy
fDate :
5/1/2006 12:00:00 AM
Abstract :
We demonstrate novel near-infrared waveguide photodetectors in polycrystalline germanium deposited on silicon-on-insulator at low temperatures. We present the design, fabrication, and characterization of two photodiodes and their comparison. Without optimization, at 1.55 μm, we measured wall-plug and effective responsivities as high as 30 mA/W and in excess of 150 mA/W, respectively.
Keywords :
elemental semiconductors; germanium; infrared detectors; integrated optoelectronics; optical design techniques; optical fabrication; optical waveguides; photodetectors; photodiodes; silicon-on-insulator; 1.55 mum; Ge-Si; near-infrared waveguide photodetectors; photodiodes; polycrystalline germanium; silicon-on-insulator; Absorption; Bandwidth; Detectors; Fabrication; Germanium; Optical waveguides; PIN photodiodes; Photodetectors; Silicon; Temperature; Germanium (Ge); integrated optoelectronics; near-infrared (NIR); photodetectors; silicon (Si) optoelectronics;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.873964
