DocumentCode :
917416
Title :
On the rate of growth and decay of high-field domains in n-type gallium arsenide
Author :
Guha, Saikat
Volume :
59
Issue :
4
fYear :
1971
fDate :
4/1/1971 12:00:00 AM
Firstpage :
718
Lastpage :
719
Abstract :
The time rates of the growth and decay of high-field domains in n-type gallium arsenide are calculated taking into consideration the simultaneous presence of a decaying domain and a growing domain in the sample. The current waveform during the transient condition as obtained from this model is also presented.
Keywords :
Anodes; Boundary conditions; Cathodes; Equations; Gallium arsenide; Gunn devices; Shape; Steady-state; Voltage; Writing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1971.8247
Filename :
1450177
Link To Document :
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