DocumentCode
917448
Title
Fundamental modelling of cylindrical-geometry bipolar transistors
Author
Slatter, J.A.G.
Author_Institution
Mullard Research Laboratories, Redhill, UK
Volume
8
Issue
9
fYear
1972
Firstpage
222
Lastpage
223
Abstract
Fundamental modelling programs which calculate the properties of planar-geometry bipolar transistors can be used to calculate the properties of cylindrical-geometry bipolar transistors by a transformation of co-ordinates.
Keywords
bipolar transistors; modelling; semiconductor device models; bipolar transistors; cylindrical geometry; modelling; planar geometry; transformation of coordinates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720160
Filename
4235611
Link To Document