• DocumentCode
    917483
  • Title

    Leakage currents of m.o.s. devices under surface-depletion conditions

  • Author

    Stuart, R.A. ; Eccleston, W.

  • Author_Institution
    University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
  • Volume
    8
  • Issue
    9
  • fYear
    1972
  • Firstpage
    225
  • Lastpage
    227
  • Abstract
    It is found that the drain current of m.o.s.t. devices depends exponentially on gate voltage over a wide range of current when the surface of the device is depleted. An explanation of this effect is given. The results show that low-current measurements of this type for a variety of substrate bias conditions can provide information on the density of midgap states and the amount of impurity segregation in practical structures.
  • Keywords
    field effect transistors; leakage currents; MOST devices; density; drain current; impurity segregation; leakage currents; low current measurements; midgap states; surface depletion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720163
  • Filename
    4235614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917483