• DocumentCode
    917733
  • Title

    Computer study of submicrometre f.e.t.s

  • Author

    Reiser, M. ; Wolf, P.

  • Author_Institution
    IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
  • Volume
    8
  • Issue
    10
  • fYear
    1972
  • Firstpage
    254
  • Lastpage
    256
  • Abstract
    The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 ¿m gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 ¿m.
  • Keywords
    computer applications; electronics applications of computers; field effect transistors; modelling; semiconductor device models; FET; computer model; electrical properties; submicrometre gates; two dimensional analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720188
  • Filename
    4235640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917733