918020

Erratum: Emitter-current-limited injection in negative-mobility semiconductors in the limit of zero doping

Dascalu, D.

8

11

1972

296

III-V semiconductors; electron mobility; gallium arsenide; semiconductor diodes; semiconductors; space charge; space-charge limited devices; emitter current limited injection; negative mobility; noise; semiconductors; small signal theory; zero doping;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19720218

4235671