Title :
High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy
Author :
Lu, S.S. ; Huang, C.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
4/1/1992 12:00:00 AM
Abstract :
A Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor (HBT) grown on a
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; Ga/sub 0.51/In/sub 0.49/P-GaAs; HBT; I-V characteristics; common-emitter DC current gain; conduction-band discontinuity; differential gain; emitter/base junction; gas-source molecular beam epitaxy; heterojunction bipolar transistor; high current gain; offset voltage; valence-band discontinuity; Chemical vapor deposition; Conducting materials; Doping; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Performance gain; Photonic band gap; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
