DocumentCode
918314
Title
A small-signal impedance for the microwave avalanche diode
Author
Shapiro, J.S.
Volume
59
Issue
6
fYear
1971
fDate
6/1/1971 12:00:00 AM
Firstpage
1037
Lastpage
1039
Abstract
Using the dispersion relation previously developed by these authors, and suitable boundary conditions, the small-signal impedance of the avalanche region in an IMPATT diode is derived. In this derivation unequal, but constant, hole and electron velocities and ionization coefficients are assumed. The impedance is derived for the case of infinite multiplication and is plotted for both Si and GaAs diodes. The effects of the drift regions are not included.
Keywords
Boundary conditions; Charge carrier processes; Diodes; Dispersion; Equations; Frequency; Gallium arsenide; Impedance; Ionization; Silicon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8328
Filename
1450258
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