Title :
Improved geometry for a semiconductor surface-wave oscillator
Author :
Swanenburg, T.J.B.
Author_Institution :
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Abstract :
It is shown theoretically that the recently observed negative conductance of an interdigital-electrode structure situated near a semiconductor surface is enhanced considerably if a configuration is chosen which is symmetrical with respect to a plane perpendicular to the carrier drift velocity. Furthermore, the threshold drift velocity may be much lower than in the original configuration.
Keywords :
negative resistance effects; oscillators; semiconductor devices; improved geometry; interdigital electrode structure; negative conductance; semiconductor surface wave oscillator; threshold drift velocity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720256
