Title :
Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors
Author :
Dattoli, Eric N. ; Kim, Kuk-Hwan ; Fung, Wayne Y. ; Choi, Seok-Youl ; Lu, Wei
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
fDate :
7/1/2009 12:00:00 AM
Abstract :
In this letter, radio-frequency characterization of fully transparent thin-film transistors (TFTs) based on chemically synthesized nanowires (NWs) has been carried out. The NW TFTs show current-gain cutoff frequency f T of 109 MHz and power-gain cutoff frequency f max of 286 MHz. The TFTs were fabricated on glass substrates using aligned SnO2 NWs as the transistor channel and sputtered indium-tin-oxide films as the source-drain and gate electrodes. Besides exhibiting > 100-MHz operation frequencies, the transparent NW TFTs show a narrow distribution of performance metrics among different devices. These results suggest the NW-TFT approach may be promising for high-speed transparent and flexible integrated circuits fabricated on diverse substrates.
Keywords :
nanoelectronics; nanofabrication; nanowires; semiconductor device models; semiconductor thin films; thin film transistors; tin compounds; NW-TFT fabrication; SnO2; chemically synthesized nanowire; frequency 109 MHz; frequency 286 MHz; glass substrate; radio-frequency operation; source-drain electrode; transistor channel; transparent nanowire thin-film transistor; Nanowire (NW); semiconductor materials; thin-film transistor (TFT); transparent devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2021167
