DocumentCode
918495
Title
GaAs Schottky diodes with near-ideal characteristics
Author
Irvin, J.C. ; Sze, Simon M.
Volume
59
Issue
7
fYear
1971
fDate
7/1/1971 12:00:00 AM
Firstpage
1121
Lastpage
1122
Abstract
The I-V characteristics of some GaAs Schottky-barrier IMPATT diodes are found to be nearly ideal at operating temperatures (∼200°C). Fabricated on epitaxial n-type substrate with platinum contacts, the diodes use a truncated cone shape to avoid soft breakdown. The breakdown voltage and its temperature dependence are close to calculated values for one-sided abrupt junctions.
Keywords
Avalanche breakdown; Capacitance; Electrodes; Gallium arsenide; Schottky barriers; Schottky diodes; Semiconductor diodes; Shape; Substrates; Temperature dependence;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8344
Filename
1450274
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