Theory of the maximum charge stored in the thin oxide MNOS memory transistor

The maximum charge stored in the thin oxide metal-nitride-oxide-silicon (MNOS) memory transistor is calculated using a previously developed theory for the oxide current and experimental values for the nitride currents. The calculation is performed for oxide thicknesses of 15-50 Å and for six different nitride deposition temperatures. The theoretical results are shown to agree with recently published experimental data.