Title :
Simulation of Pt-n-p+ silicon punchthrough device
Author :
Stewart, J.A.C. ; Wakefield, J.
Author_Institution :
Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Abstract :
The small-signal impedance of a Pt-n-p+ device has been computed using a model which describes in detail the physical mechanisms in the depleted n region. The small-signal negative resistance is shown to be both frequency- and temperature-dependent at a given bias-current density.
Keywords :
electrical impedance; microwave devices; negative resistance effects; semiconductor device models; simulation; Pt-n-p silicon structure; microwave device; negative resistance effects; punchthrough injection device; semiconductor device models; simulation; small signal impedance analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720276
