DocumentCode :
918668
Title :
Microwave transistors: Theory and design
Author :
Cooke, Harry F.
Author_Institution :
Avantek, Incorporated, Santa Clara, Calif.
Volume :
59
Issue :
8
fYear :
1971
Firstpage :
1163
Lastpage :
1181
Abstract :
Microwave transistors are useful as small-signal amplifiers to 6 GHz and power amplifiers to 4 GHz. Nearly all microwave transistors are of the silicon planar type. Power transistors use three types of geometries--interdigitated, overlay, and mesh--while small-signal transistors use interdigitated only. The general theory of the frequency response of transistors is reviewed, including active and inactive elements. A condensed description of the design and processing steps for a silicon microwave transistor is given. A final section deals with the types of high-frequency measurements used in the design and analysis of transistors.
Keywords :
Capacitance; Frequency; Geometry; Germanium; Microwave theory and techniques; Microwave transistors; Noise figure; Power amplifiers; Power transistors; Silicon;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1971.8362
Filename :
1450292
Link To Document :
بازگشت