• DocumentCode
    918676
  • Title

    Microwave mixer and detector diodes

  • Author

    Anand, Yoginder ; Moroney, William J.

  • Author_Institution
    Microwave Associates, Inc., Burlington, Mass.
  • Volume
    59
  • Issue
    8
  • fYear
    1971
  • Firstpage
    1182
  • Lastpage
    1190
  • Abstract
    Recent advances in microwave mixer and detector diodes are reviewed. Devices considered are germanium back diodes, silicon and gallium arsenide point-contact diodes, and Schottky-barrier diodes. Current work on low-barrier (n-type) Schottky diodes and high-burnout point-contact diodes is also described. Experimental results of CW and RF pulse burnout of these devices are summarized. Different approaches to improve the power-handling capability of Schottky diodes at S-, X-, and Ku-band frequencies are considered.
  • Keywords
    Acoustical engineering; Capacitance; Detectors; Frequency; Microwave devices; Noise figure; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Temperature;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8363
  • Filename
    1450293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=918676