Title :
Effect of temperature on the base resistance and the noise factor of a bipolar junction transistor
Author_Institution :
McMaster University, Department of Electrical Engineering, Hamilton, Canada
Abstract :
Noise measurements are used to determine the base resistance of a high-gain diffused silicon bipolar junction transistor over a temperature range 203¿443 K. The noise factor F is degraded as the ambient device temperature is increased.
Keywords :
bipolar transistors; noise; resistance (electric); thermal effects; 203 to 443 degrees K; Si transistor; bipolar transistors; diffusion; high gain; noise factor; noise measurements; resistance; thermal effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720284
