Title :
Design for a high-speed m.o.s. associative memory
Author :
Lea, Robert Mike
Author_Institution :
Brunel University, Department of Electrical Engineering, Uxbridge, UK
Abstract :
An experimental 64-bit m.o.s. associative memory has been developed from a limit-case design study. Speeds in excess of 50 MHz are reported at a cost per bit that could approach eight times that for a conventional m.o.s. dynamic r.a.m. The design of the basic associative memory cell is described.
Keywords :
associative storage; cellular arrays; metal-insulator-semiconductor devices; random-access storage; semiconductor storage devices; semiconductor storage systems; 50 MHZ; MOS; associative storage; cellular arrays; high speed memory; limit case design; random access storage; semiconductor storage systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720285
