DocumentCode
918777
Title
Avalanche region width in various structures of IMPATT diodes
Author
Schroeder, W.E. ; Haddad, G.I.
Volume
59
Issue
8
fYear
1971
Firstpage
1245
Lastpage
1248
Abstract
The avalanche region of one-sided and two-sided abrupt junctions has been studied. These are the structures most commonly utilized for IMPATT diodes. Numerical results are presented which show that n+-p Si diodes have much narrower avalanche regions, due to the unequal ionization rates in Si, than the complementary p+-n type. The implications of these results with respect to IMPATT diode design are discussed.
Keywords
Bipolar transistors; Driver circuits; Electric breakdown; Electrons; Equations; Gallium arsenide; Ionization; Resists; Schottky barriers; Schottky diodes;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8372
Filename
1450302
Link To Document