$\\hbox {HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

Author

Lee, Heng Yuan ; Chen, Pang-Shiu ; Wu, Tai-Yuan ; Chen, Yu Sheng ; Chen, Fred ; Wang, Ching-Chiun ; Tzeng, Pei-Jer ; Lin, C.H. ; Tsai, Ming-Jinn ; Lien, Chenhsin

Author_Institution

Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu

Volume

30

Issue

7

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

703

Lastpage

705

Abstract

A novel method of fabricating HfO_x-based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10⁵ cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfO_x stacked layer in this letter shows promising application in the next generation of nonvolatile memory.

Keywords

aluminium alloys; bipolar memory circuits; buffer layers; copper alloys; hafnium compounds; programmable circuits; random-access storage; stability; AlCu-HfO_x; bipolar resistive memory; buffer electrode; capacitor-like memory cell; erasing endurance; nonvolatile memory; programming endurance; reactive buffer layer; robust data retention; robust endurance; $hbox{HfO}_{x}$; AlCu; resistive random access memory (RRAM); trap and detrap;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2021004

Filename

4982708