Title :
Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates
Author :
Tatebayashi, Jun ; Jallipalli, Anitha ; Kutty, Maya Narayanan ; Huang, Shenghong ; Nunna, Kalyan ; Balakrishnan, Ganesh ; Dawson, L. Ralph ; Huffaker, Diana L.
Author_Institution :
Dept. of Electr. Eng., Univ. of California Los Angeles, Los Angeles, CA
Abstract :
We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and its application to III-Sb-based quantum-well broad-area edge-emitting laser diodes monolithically grown on an Si (001) substrate. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. A use of 5deg miscut Si substrates enables simultaneous IMF formation and suppression of an antiphase domain, resulting in a drastic suppression of dislocation density over the III-Sb epilayer and realization of electrically injected laser diodes operating at 77 K. The current-voltage characteristics indicate a diode turn-on of 0.7 V, which is consistent with a theoretical built-in potential of the laser diode. This device is characterized by a 9.1-Omega forward resistance and a leakage current density of 0.7 A/cm2 at -5 V and 46.9 A/cm2 at -15 V.
Keywords :
III-V semiconductors; aluminium compounds; antiphase boundaries; dislocation density; gallium compounds; integrated optics; laser beams; leakage currents; optical materials; quantum well lasers; surface emitting lasers; GaSb-AlGaSb-Si; III-antimony-based quantum-well broad-area edge-emitting laser diode; IMF array; Si; antiphase domain suppression; dislocation density suppression; forward resistance; interfacial misfit array; leakage current density; monolithically integrated laser diode; resistance 9.1 ohm; silicon substrate; temperature 77 K; voltage -15 V; voltage -5 V; voltage 0.7 V; 5$^{circ}$ miscut; GaSb quantum well (QW); Si photonics; Si substrates; interfacial misfit (IMF); monolithic integration; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2009.2015678
