Title :
Small-signal admittance of the insulator-n type-gallium-arsenide interface region
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Abstract :
Capacitance/voltage characteristics of metal-insulator-semiconductor n type gallium arsenide differ considerably from the normal behaviour as observed with silicon. A trap model for the gallium-arsenide-surface region is proposed. The frequency dependence of the derived small-signal capacitance and conductance is verified by measurements.
Keywords :
III-V semiconductors; admittance measurement; electron traps; gallium arsenide; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor device models; semiconductor-insulator boundaries; surface electron states; frequency dependence; gallium arsenide interface region; n type gallium arsenide; small signal admittance; trap model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720304
