• DocumentCode
    919068
  • Title

    Interpretation of the preswitching behaviour of chalcogenide-glass switches in terms of a space-charge-injection mechanism

  • Author

    Allison, J. ; Dawe, V.R.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    8
  • Issue
    17
  • fYear
    1972
  • Firstpage
    437
  • Lastpage
    439
  • Abstract
    Many of the characteristics of threshold switching devices may be explained in terms of a simple space-charge-injection model if it is assumed that switching occurs at a critical electric-field strength. Experimental evidence to support this hypothesis is described.
  • Keywords
    electrical conductivity of solids; semiconductor materials; semiconductor switches; space charge; space-charge limited devices; thin film devices; As; Ge; Si; Te; amorphous chalcogenide film; glass; preswitching behaviour; space; space charge limited devices; spherically tipped gold probe; switches; thin film devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720317
  • Filename
    4235776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=919068