Title :
Interpretation of the preswitching behaviour of chalcogenide-glass switches in terms of a space-charge-injection mechanism
Author :
Allison, J. ; Dawe, V.R.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Many of the characteristics of threshold switching devices may be explained in terms of a simple space-charge-injection model if it is assumed that switching occurs at a critical electric-field strength. Experimental evidence to support this hypothesis is described.
Keywords :
electrical conductivity of solids; semiconductor materials; semiconductor switches; space charge; space-charge limited devices; thin film devices; As; Ge; Si; Te; amorphous chalcogenide film; glass; preswitching behaviour; space; space charge limited devices; spherically tipped gold probe; switches; thin film devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720317
