Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-μm gate length quantum-well HEMT´s

Author

Wang, Zhi-Gong ; Berroth, Manfred ; Nowotny, Ulrich ; Ludwig, Manfred ; Hofmann, Peter ; Hülsmann, Axel ; Köhler, Klaus ; Raynor, Brian ; Schneider, Joachim

Author_Institution

Fraunhofer-Inst. for Appl. Solid-State Phys., Freiburg, Germany

Volume

28

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

829

Lastpage

834

Abstract

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs-GaAs quantum-well high electron mobility transistors (QW HEMTs) with gate lengths of 0.3 μm has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40-mA modulation current for a laser diode with 20-Ω dynamic resistance. The power consumption is less than 500 mW

Keywords

digital communication systems; driver circuits; field effect integrated circuits; high electron mobility transistors; laser accessories; optical communication equipment; optical modulation; power integrated circuits; semiconductor lasers; 0.3 micron; 12 GHz; 20 Gbit/s; 20 ohm; 500 mW; 8 Gbit/s; 90 mA; AlGaAs-GaAs; high electron mobility transistors; integrated laser-diode voltage driver; maximum modulation voltage; maximum output current; modulation current; optical systems; power consumption; quantum-well; Bandwidth; Bit rate; Driver circuits; Electron optics; HEMTs; Integrated optics; MODFETs; Optical materials; Quantum well lasers; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.222183

Filename

222183