• DocumentCode
    919330
  • Title

    A resonant MOSFET gate driver with efficient energy recovery

  • Author

    Chen, Yuhui ; Lee, Fred C. ; Amoroso, Luca ; Wu, Ho-Pu

  • Author_Institution
    Linear Technol. Corp., Milpitas, CA, USA
  • Volume
    19
  • Issue
    2
  • fYear
    2004
  • fDate
    3/1/2004 12:00:00 AM
  • Firstpage
    470
  • Lastpage
    477
  • Abstract
    High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.
  • Keywords
    DC-DC power convertors; PWM power convertors; driver circuits; insulated gate bipolar transistors; power MOSFET; resonant power convertors; DC-DC power conversion; IGBT; PWM converters; discharging transitions; efficient energy recovery; high frequency pulse-width modulation; metal oxide semiconductor field effect transistor; resonant MOSFET gate driver; resonant gate drive techniques; Driver circuits; Drives; FETs; Frequency conversion; Frequency modulation; MOSFET circuits; Pulse width modulation; Pulse width modulation converters; RLC circuits; Resonance;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2003.823206
  • Filename
    1271331