DocumentCode
919330
Title
A resonant MOSFET gate driver with efficient energy recovery
Author
Chen, Yuhui ; Lee, Fred C. ; Amoroso, Luca ; Wu, Ho-Pu
Author_Institution
Linear Technol. Corp., Milpitas, CA, USA
Volume
19
Issue
2
fYear
2004
fDate
3/1/2004 12:00:00 AM
Firstpage
470
Lastpage
477
Abstract
High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.
Keywords
DC-DC power convertors; PWM power convertors; driver circuits; insulated gate bipolar transistors; power MOSFET; resonant power convertors; DC-DC power conversion; IGBT; PWM converters; discharging transitions; efficient energy recovery; high frequency pulse-width modulation; metal oxide semiconductor field effect transistor; resonant MOSFET gate driver; resonant gate drive techniques; Driver circuits; Drives; FETs; Frequency conversion; Frequency modulation; MOSFET circuits; Pulse width modulation; Pulse width modulation converters; RLC circuits; Resonance;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2003.823206
Filename
1271331
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