DocumentCode :
919354
Title :
L-band high power silicon p-i-n diode switch
Author :
Stachejko, V.
Volume :
59
Issue :
9
fYear :
1971
Firstpage :
1369
Lastpage :
1370
Abstract :
An extremely high power silicon p-i-n diode switch was developed for operation over the 1255- to 1385-MHz frequency range. It was successfully tested at 4-MW peak power with 100-µs pulsewidth. and 2.5-MW peak and 100-kW average power with 200-µs pulsewidth in a balanced duplexer configuration.
Keywords :
Coaxial components; L-band; P-i-n diodes; Power semiconductor switches; Radio frequency; Semiconductor diodes; Silicon; Space vector pulse width modulation; Temperature; Testing;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1971.8427
Filename :
1450357
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=919354
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