Title :
Effect of field-dependent mobility on m.o.s. transistor characteristics
Author :
Laur, J. ; Jayadevaiah, T.S.
Author_Institution :
College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Department of Electrical Engineering & Laboratory of Surface Studies, Milwaukee, USA
Abstract :
The authors calculate the characteristics of m.o.s.t.s, taking full account of the surface electric-field dependence of mobility in the channel, which is very significant for thin-oxide or high-gate-voltage devices. An approximation is used for the average effect of background ionised impurity charge. Fields along the channel are assumed to have a negligible influence on mobility.
Keywords :
electric field effects; electron mobility; field effect transistors; channel electron mobility; electric field effect; field dependent mobility effect; metal oxide semiconductor transistor characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720346
