DocumentCode
919378
Title
Effect of field-dependent mobility on m.o.s. transistor characteristics
Author
Laur, J. ; Jayadevaiah, T.S.
Author_Institution
College of Engineering & Applied Science, University of Wisconsin-Milwaukee, Department of Electrical Engineering & Laboratory of Surface Studies, Milwaukee, USA
Volume
8
Issue
19
fYear
1972
Firstpage
482
Lastpage
483
Abstract
The authors calculate the characteristics of m.o.s.t.s, taking full account of the surface electric-field dependence of mobility in the channel, which is very significant for thin-oxide or high-gate-voltage devices. An approximation is used for the average effect of background ionised impurity charge. Fields along the channel are assumed to have a negligible influence on mobility.
Keywords
electric field effects; electron mobility; field effect transistors; channel electron mobility; electric field effect; field dependent mobility effect; metal oxide semiconductor transistor characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720346
Filename
4235807
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