Title :
Temperature stabilization of MOS transistor gain
Abstract :
The temperature influences directly the gain parameter of MOS transistor and indirectly by varying the cascade operating regime. On certain conditions this may give a complete stabilization of gain.
Keywords :
Boundary conditions; Calculus; Cutoff frequency; Integral equations; MOSFETs; Maxwell equations; Plasma stability; Stability analysis; Temperature; Waveguide theory;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8432
