Title :
Quantum-mechanical effects in trigate SOI MOSFETs
Author :
Colinge, Jean-Pierre ; Alderman, John C. ; Xiong, Weize ; Cleavelin, C. Rinn
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
A self-consistent Poisson-Schrödinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 nm × 2 nm. The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is reduced and as the electron concentration in the channel is increased. As a consequence, the threshold voltage is higher than predicted by classical Poisson solvers. The current drive is diminished, and the subthreshold slope is degraded, especially in the devices with the smallest cross sections.
Keywords :
MOSFET; Poisson equation; semiconductor device models; semiconductor quantum wires; silicon-on-insulator; Poisson-Schrodinger solver; n-channel SOI transistors; quantum wires; quantum-mechanical effects; silicon-on-insulator technology; trigate SOI MOSFET; trigate SOI transistors; Atomic measurements; Degradation; Electrons; MOSFETs; Neodymium; Poisson equations; Schrodinger equation; Silicon on insulator technology; Threshold voltage; Wires; MOSFETs; quantum wires; semiconductor device modeling; silicon-on-insulator (SOI) technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.871872
