Quantum-mechanical effects in trigate SOI MOSFETs

Author

Colinge, Jean-Pierre ; Alderman, John C. ; Xiong, Weize ; Cleavelin, C. Rinn

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA

Volume

53

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

1131

Lastpage

1136

Abstract

A self-consistent Poisson-Schrödinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 nm × 2 nm. The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is reduced and as the electron concentration in the channel is increased. As a consequence, the threshold voltage is higher than predicted by classical Poisson solvers. The current drive is diminished, and the subthreshold slope is degraded, especially in the devices with the smallest cross sections.

Keywords

MOSFET; Poisson equation; semiconductor device models; semiconductor quantum wires; silicon-on-insulator; Poisson-Schrodinger solver; n-channel SOI transistors; quantum wires; quantum-mechanical effects; silicon-on-insulator technology; trigate SOI MOSFET; trigate SOI transistors; Atomic measurements; Degradation; Electrons; MOSFETs; Neodymium; Poisson equations; Schrodinger equation; Silicon on insulator technology; Threshold voltage; Wires; MOSFETs; quantum wires; semiconductor device modeling; silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.871872

Filename

1624694