Influence of dislocations on the DC characteristics of AlGaAs/GaAs heterojunction bipolar transistors

Author

Ito, Hiroshi ; Nakajima, Osaake ; Furuta, Tomofumi ; Harris, James S., Jr.

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

232

Lastpage

234

Abstract

The influence of dislocations on the minority electron lifetime in p-type GaAs layers and on AlGaAs/GaAs HBTs has been investigated. The minority electron lifetime in 1*10/sup 19//cm/sup 3/ doped p-GaAs decreases significantly when the dislocation density is greater than 10/sup 7//cm/sup 2/. This result agrees well with analysis of carrier transport in highly dislocated material. Current gain reduction in HBTs with high dislocation density is found to be due to two effects: reduction of the electron lifetime in the base layer and an increase of the recombination current in the emitter-base junction depletion region. These two effects are comparable in reducing the current gain.<>

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; dislocation density; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; minority carriers; AlGaAs-GaAs; DC characteristics; HBTs; base layer; carrier transport; current gain-reduction; dislocation density; dislocations; emitter-base junction depletion region; heterojunction bipolar transistors; minority electron lifetime; p-type; recombination current; Electrons; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Indium tin oxide; Laboratories; Large scale integration; Monolithic integrated circuits; Solid state circuits; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145037

Filename

145037