Compact model for amorphous layer thickness formed by ion implantation over wide ion implantation conditions

In this paper, a through dose parameter Φ_ac/, which is defined by the dose of ions passing through the amorphous/crystal (a/c) interface, is proposed, and the use of Φ_ac/ combined with parameters for ion-implantation profiles to model the thickness of the amorphous layer d_a is demonstrated. It is shown that Φ_ac/ is independent of ion-implantation conditions but depends on the impurities. Φ_ac/ for Ge, Si, As, P, B, In, and Sb is evaluated. Consequently, d_a over a wide range of ion-implantation conditions for various ions was predicted.