DocumentCode
919565
Title
Small-signal noise behaviour of companion p+-n-p+ and p+-n-v-p+ punchthrough microwave diodes
Author
Bj¿¿rkman, Gunnar ; Snapp, Craig P.
Author_Institution
Microwave Institute Foundation, Stockholm, Sweden
Volume
8
Issue
20
fYear
1972
Firstpage
501
Lastpage
503
Abstract
The frequency and current dependence of the noise factor of tuned microwave amplifiers, utilising punchthrough injection transit-time diodes, has been determined. Noise factors as low as 10 and 11 dB were obtained from companion p+-n-p+ and p+-n-v-p+ structures, respectively, when tuned to frequencies in the vicinity of 7.5 GHz.
Keywords
microwave amplifiers; noise; semiconductor diodes; transit time devices; tuning; avalanche devices; microwave amplifiers; noise; p-n-p structures; punchthrough microwave diodes; semiconductor diodes; small signal behaviour; transit time devices; tuning;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720364
Filename
4235826
Link To Document