Title :
Small-signal noise behaviour of companion p+-n-p+ and p+-n-v-p+ punchthrough microwave diodes
Author :
Bj¿¿rkman, Gunnar ; Snapp, Craig P.
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
The frequency and current dependence of the noise factor of tuned microwave amplifiers, utilising punchthrough injection transit-time diodes, has been determined. Noise factors as low as 10 and 11 dB were obtained from companion p+-n-p+ and p+-n-v-p+ structures, respectively, when tuned to frequencies in the vicinity of 7.5 GHz.
Keywords :
microwave amplifiers; noise; semiconductor diodes; transit time devices; tuning; avalanche devices; microwave amplifiers; noise; p-n-p structures; punchthrough microwave diodes; semiconductor diodes; small signal behaviour; transit time devices; tuning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720364
