Applications of scanning electron microscopy to thin film studies on semiconductor devices

Some of the various uses of the scanning electron microscope (SEM) as applied to thin film studies on semiconductor devices are illustrated. Examples presented include the use of the SEM to measure thickness variations in an aluminum film, to determine evaporation coverage of aluminum films over oxide steps, to locate θ phase (CuAl2) particles in an Al-2% Cu thin film, to determine crystallographic orientation using Coates-Kikuchi patterns, to find an open circuit in a nichrome resistor, to follow the fuse blowout of an aluminum stripe, and to determine the chemical composition of thin films. In these examples, the secondary backscatter electron beam induced current (EBIC), voltage contrast, and X-ray modes are demonstrated as well as the rapid scan technique.