DocumentCode
919661
Title
Edge breakdown in 4H-SiC avalanche photodiodes
Author
Beck, Ariane L. ; Yang, Bo ; Guo, Xiangyi ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
Volume
40
Issue
3
fYear
2004
fDate
3/1/2004 12:00:00 AM
Firstpage
321
Lastpage
324
Abstract
We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10° sidewall bevel. These devices exhibit low dark currents, <10 pA for a 160-μm-diameter device, at the onset of avalanche gain. Two-dimensional raster scans of both beveled and nonbeveled devices, fabricated from the same wafer, show the photocurrent as a function of position and illustrate the spatial properties of avalanche gain in SiC APDs.
Keywords
avalanche breakdown; avalanche photodiodes; impact ionisation; photoconductivity; photodetectors; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 160 mum; 4H-SiC avalanche photodiodes; APD; SiC; avalanche gain; dark currents; edge breakdown suppression; mesastructure; photocurrent; raster scans; sidewall bevel; Avalanche breakdown; Avalanche photodiodes; Dark current; Electric breakdown; Etching; Photoconductivity; Photodetectors; Resists; Shape; Silicon carbide;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2003.823033
Filename
1271365
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