Title :
50 GHz gallium-arsenide IMPATT oscillator
Author :
Gibbons, G. ; Purcell, J.J. ; Wickens, P.R. ; Gokgor, H.S.
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Abstract :
Gallium-arsenide diffused-junction IMPATT diodes have been operated in F band (40¿60 GHz), producing output powers up to 140 mW, with a conversion efficiency greater than 7%.
Keywords :
IMPATT diodes; microwave oscillators; F-band; GaAs devices; IMPATT diodes; microwave oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720374
