Title :
Depletion-mode TFT made of low-temperature poly-Si
Author :
Son, Yong Duck ; Yang, Kyung Dong ; Bae, Byung Seong ; Jang, Jin ; Hong, Munpyo ; Kim, Sung Jin
Author_Institution :
Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea
fDate :
5/1/2006 12:00:00 AM
Abstract :
This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si TFT is normally ON-state, so that the current can flow from the source to the drain at zero gate voltage. The TFT exhibited a field-effect mobility of 60 cm2/V·s, a threshold voltage of 18 V, an on/of current ratio of 106, and a gate voltage swing of 1.1 V/dec.
Keywords :
boron; carrier mobility; elemental semiconductors; field effect transistors; semiconductor doping; silicon; thin film transistors; 18 V; B; Si; depletion-mode TFT; field-effect mobility; hole-accumulation layer; low-temperature TFT; low-temperature poly-Si; p-channel TFT; polycrystalline silicon TFT; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Chemical lasers; Chemical vapor deposition; Doping; Glass; Large scale integration; Silicon; Thin film transistors; Threshold voltage; Depletion-mode thin-film transistor (TFT); polycrystalline silicon thin-film transistor (poly-Si TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.872359
