Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0° using off-angle substrates

Boron was ion implanted into θ° off-angle crystalline silicon substrates with a tilt angle of θ°. It is assumed that the B profiles along the ion-beam direction are identical, enabling the lateral straggling of B ion implanted with a tilt angle of 0° to be evaluated experimentally for the first time. The measurements show that the lateral straggling of channeling ions is small.