DocumentCode
919703
Title
Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0° using off-angle substrates
Author
Suzuki, Kunihiro ; Tanahashi, Katsuto ; Nagayama, Susumu ; Magee, Charles W. ; Büyüklimanli, Temel H. ; Iwamoto, Eiji
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
53
Issue
5
fYear
2006
fDate
5/1/2006 12:00:00 AM
Firstpage
1262
Lastpage
1265
Abstract
Boron was ion implanted into θ° off-angle crystalline silicon substrates with a tilt angle of θ°. It is assumed that the B profiles along the ion-beam direction are identical, enabling the lateral straggling of B ion implanted with a tilt angle of 0° to be evaluated experimentally for the first time. The measurements show that the lateral straggling of channeling ions is small.
Keywords
boron; channelling; ion beam effects; ion implantation; silicon; Si:B; boron profiles; channeling ions; crystalline silicon substrates; ion implantation; ion-beam direction; lateral straggling; off-angle substrates; Analytical models; Boron; Crystallization; Databases; Electric variables measurement; Impurities; Ion implantation; Laboratories; Silicon; Very large scale integration; Boron; ion implantation; lateral straggling; tilt;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.872908
Filename
1624711
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