Title :
Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel
Author :
Jazaeri, Farzan ; Barbut, Lucian ; Sallese, Jean-Michel
Author_Institution :
Swiss Fed. Inst. of Technol. in Lausanne, Lausanne, Switzerland
Abstract :
In this paper, we investigate the technological constrains and design limitations of ultrathin body junctionless double gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of OFF-state-current and voltages are obtained and validated with TCAD simulations. This set of analytical expressions can be used as a guideline for technology optimization of JL DG MOSFETs.
Keywords :
MOSFET; semiconductor doping; technology CAD (electronics); JL DG MOSFET; OFF state current; TCAD simulation; design space; doping concentration; junctionless symmetric DG MOSFET; silicon thickness; ultrathin body junctionless double gate MOSFET; Compact model; OFF-state-current; double gate MOSFETs; junctionless; nanowire; subthreshold;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2261073
