DocumentCode
91971
Title
Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel
Author
Jazaeri, Farzan ; Barbut, Lucian ; Sallese, Jean-Michel
Author_Institution
Swiss Fed. Inst. of Technol. in Lausanne, Lausanne, Switzerland
Volume
60
Issue
7
fYear
2013
fDate
Jul-13
Firstpage
2120
Lastpage
2127
Abstract
In this paper, we investigate the technological constrains and design limitations of ultrathin body junctionless double gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of OFF-state-current and voltages are obtained and validated with TCAD simulations. This set of analytical expressions can be used as a guideline for technology optimization of JL DG MOSFETs.
Keywords
MOSFET; semiconductor doping; technology CAD (electronics); JL DG MOSFET; OFF state current; TCAD simulation; design space; doping concentration; junctionless symmetric DG MOSFET; silicon thickness; ultrathin body junctionless double gate MOSFET; Compact model; OFF-state-current; double gate MOSFETs; junctionless; nanowire; subthreshold;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2261073
Filename
6525384
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