Title :
Active-matrix OLED on bendable metal foil
Author :
Cheon, Jun Hyuk ; Choi, Jong Hyun ; Hur, Ji Ho ; Jang, Jin ; Shin, Hyun Soo ; Jeong, Jae Kyeong ; Mo, Yeon Gon ; Chung, Ho Kyoon
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
fDate :
5/1/2006 12:00:00 AM
Abstract :
This brief reports a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum field-effect mobility of 86.1 cm2/Vs, threshold voltage of 3.5 V, gate voltage swing of 0.8 V/dec, and the minimum off current of 10-12 A/μm at Vds=-0.1 V. A 4.1-in active-matrix backplane was fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and one capacitor. The scan driver circuits with PMOS were integrated on the flexible metal foil. The top emission, organic light emitting display having a brightness of 100 cd/m2.
Keywords :
LED displays; field effect transistors; flexible electronics; organic light emitting diodes; thin film transistors; -0.1 V; 3.5 V; 4 in; PMOS devices; Si; active-matrix OLED; bendable metal foil; field-effect mobility; flexible OLED; metal-induced crystallization; nitride cap layer; poly-silicon thin-film transistor; scan driver circuits; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Active matrix technology; Backplanes; Crystallization; Organic light emitting diodes; Plastics; Steel; Substrates; Thin film transistors; Active-matrix organic light-emitting diode (AMOLED); metal foil; metal-induced crystallization with a nitride cap layer (MICC); poly-Si thin-film transistor (TFT); stainless steel;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.871873
