Super-low-noise performance of direct-ion-implanted 0.25- mu m-gate GaAs MESFET´s

Author

Feng, Milton ; Laskar, J. ; Kruse, J.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

241

Lastpage

243

Abstract

The authors report on advanced ion implantation GaAs MESFET technology using a 0.25- mu m ´T´ gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25*200- mu m-gate GaAs MESFETs achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% I/sub DSS/ and 0.6 dB noise figure with 16.5-dB associated gain at 100% I/sub DSS/ at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs pseudomorphic HEMTs.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; electron device noise; gallium arsenide; ion implantation; solid-state microwave devices; 0.25 micron; 0.56 to 0.6 dB; 10 GHz; 13.1 to 16.5 dB; GaAs; MESFET technology; MIMIC; MMIC; SHF; T-type gate; direct implant; ion implantation; low noise device; millimeter-wave IC applications; submicron gate; Application specific integrated circuits; Decision support systems; Gallium arsenide; Ion implantation; MESFETs; Microwave technology; Millimeter wave measurements; Millimeter wave technology; Noise figure; Noise measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145040

Filename

145040