Title : 
Radiation Tolerance Techniques for a 1.6 Gb/s, 8 K and 4 K Low-Density Parity-Check Encoder
         
        
            Author : 
Whitaker, Sterling R. ; Miles, Lowell H. ; Gambles, Jody W. ; Winterrowd, Paul ; Nelson, Ron ; Orbe, Chad ; Maki, Gary K.
         
        
            Author_Institution : 
Center for Adv. Microelectron. & Biomol. Res., Univ. of Idaho, Post Falls, ID
         
        
        
        
        
            fDate : 
6/1/2009 12:00:00 AM
         
        
        
        
            Abstract : 
A multiple node upset tolerant, 1.6 Gb/s (8158, 7136) and (4088, 3360) low-density parity-check encoder was implemented in a five-metal, 0.25 mum CMOS process. Temporal separation coupled with single-event radiation tolerant flip-flops was used to harden the data path. A reduced sensitive cross-section combinational logic structure was used to harden the custom multiply accumulate blocks. This circuit structure is composed of a dual-rail NMOS-only pass-transistor network driving a cross coupled output buffer. By adding the output buffer section, only a small region of the buffer itself is vulnerable for propagation of a single-event transient. Single-event upset immunity with a linear energy transfer threshold of greater than 33 MeVldrcm2/mg and a saturation cross-section of just 0.075 mum2/bit was achieved for the 4 K encoder. A linear energy transfer threshold of greater than 17 MeVldrcm2/mg with a saturation cross-section of just 0.3 mu m2/bit was achieved for the 8 K encoder. This results in a CREME96 expected mean time between failure of 1700 years for a geosynchronous orbit. Multiple node upsets as a problem increases as smaller geometry processes are used for space electronics. A mathematical basis for this reduced cross-section, multiple upset combinational logic design method is presented.
         
        
            Keywords : 
CMOS integrated circuits; encoding; flip-flops; parity check codes; CMOS process; bit rate 1.6 Gbit/s; data path; flip-flops; linear energy transfer threshold; low-density parity-check encoder; multiple node upsets; radiation tolerance techniques; temporal separation; Coupling circuits; Energy exchange; Flip-flops; Geometry; Logic devices; Microelectronics; Parity check codes; Radiation hardening; Single event upset; Voltage; Encoding; LDPC; radiation hardness by design; single-event effects; single-event upset;
         
        
        
            Journal_Title : 
Solid-State Circuits, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JSSC.2009.2020459