Title :
A Technique for Predicting Large-Signal Performance of a GaAs MESFET
Author :
Willing, Harry A. ; Rauscher, Christen ; de Santis, Pietro
fDate :
12/1/1978 12:00:00 AM
Abstract :
A method is described for accurately predicting the nonlinear microwave performance of GaAs MESFET devices. The method utilizes time-domain analysis and is based upon the experimentally characterized bias dependence of device-circuit model elements. Precise predictions are made of fundamental and harmonic power levels up to 6 dB of gain compression.
Keywords :
Circuits; Gallium arsenide; MESFETs; Microwave devices; Microwave theory and techniques; Power system harmonics; Power system modeling; Scattering parameters; Semiconductor process modeling; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1978.1129538
