Title :
Two-dimensional analysis of planar diffusion
Author :
Vandorpe, D. ; Monnier, J.
Author_Institution :
Institut de Physique Nucléaire de Lyon, Villeurbanne, France
Abstract :
A 2-dimensional numerical analysis of diffusion phenomena in semiconductors is presented. This analysis takes into account nearly all the physical phenomena known for diffusion in semiconductors, and accurate information on lateral diffusion is obtained.
Keywords :
diffusion in solids; numerical analysis; semiconductor device models; physical phenomena; planar diffusion; semiconductor device models; two dimensional numerical analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720404
