DocumentCode
920044
Title
Accumulation transit mode in transferred-electron oscillators
Author
Jones, David ; Rees, H.D.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
8
Issue
23
fYear
1972
Firstpage
566
Lastpage
567
Abstract
Computer simulations have been used to analyse device characteristics appropriate to an accumulation-layer transit mode. Data for GaAs, previously attributed to the limited-space-charge-accumulation mode, and for indium phosphide, are identified with accumulation transit oscillations.
Keywords
Gunn oscillators; computer aided analysis; electronics applications of computers; gallium arsenide; indium compounds; simulation; solid-state microwave devices; transferred electron devices; 35 to 40 GHZ; GaAs; Gunn oscillators; InP; accumulation transit mode; computer simulation; microwave oscillators; transferred electron devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720411
Filename
4235876
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